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國立臺北科技大學 學術資源網

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Hsin-Hui Hu

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Professor/Department of Electronic Engineering
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Journal articles

  • "Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High fT of 2.09 GHz", IEEE Transactions on Electron Devices, 71, 8, 4710-4716, 2024/08, SCI
  • "The Impact of an Extended Gate Field Plate on the DC and RF Characteristics of Junctionless Thin-Film Transistor", Electronics, Volume:11, 1886, 2022/06, SCI
  • "First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications", IEEE Transactions on Electron Devices, Volume: 69, Issue: 4, pp. 2101 - 2107, 2022/04, SCI&EI
  • "Poly-Si Finlike Thin-Film Transistors With Various Wide Drain Designs for Radio Frequency and 3-D Integrated Circuits", IEEE Transactions on Electron Devices, vol. 67, no.6, pp. 2342-2345, 2020/06, SCI
  • "Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination", IEEE Transactions on Nanotechnology, vol. 19, pp. 405-409, 2020/05, SCI
  • "Analysis of Offstate Leakage Currents in Poly-Si FinTFTs with Wide Drain by Microwave Annealing", Sensors and Materials, Vol. 32, No. 1, 309–315, 2020/01, SCI
  • "Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain", Applied Sciences, vol. 8, no. 8, pp. 1406, 2018/08, SCI
  • "A Hybrid Wide Drain Poly-Si FinTFT for RF Application", IEEE Access, vol. 6, pp. 47268-47272, 2018/08, SCI&EI
  • "New Super-Junction LDMOS Based on Poly-Si Thin-Film Transistors", IEEE Journal of the Electron Devices Society, 4, 6, 430-435, 2016/11, SCI&EI
  • "退火機制對於不同通道線寬之射頻複晶矽薄膜電晶體之影響", 奈米通訊, 23, 4, 15-21, 2016/10, ELSE1
  • "Novel Poly-Si SJ-LDMOS for System-on-Panel Applications", IEEE TRANSACTIONS ON ELECTRON DEVICES, 63, 6, 2482-2487, 2016/06, SCI&EI
  • "Effects of Channel Width on High-Frequency Characteristics of Trigate Poly-Si Thin-Film Transistors Fabricated by Microwave Annealing", IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 9, 2883-2887, 2015/09, SCI&EI
  • "High-Frequency Performance of Trigate Poly-Si Thin-Film Transistors by Microwave Annealing", IEEE Electron Device Letters, 36, 4, 345 - 347, 2015/04, SCI&EI
  • "Novel Gate-All-Around High-Voltage Thin-Film Transistor With T-Shaped Metal Field Plate Design", IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 3, 882-887, 2015/03, SCI&EI
  • "Low-frequency noise in 2-bit poly-Si TANOS flash memory", Japanese Journal of Applied Physics, 54, 1, 014101-1~5, 2015/01, SCI&EI
  • "A Novel Hybrid Poly-Si Nanowire LDMOS with Extended Drift", IEEE Electron Device Letters, 35, 3, 366, 2014/03, SCI&EI
  • "Low-Frequency Noise in SONOS-TFTWith a Trigate Nanowire Structure Under Program/Erase Operation", IEEE ELECTRON DEVICE LETTERS, 33, 9, 1276, 2012/09, SCI&EI
  • "Low-Frequency Noise in Poly-Si TFT SONOS Memory with a Trigate Nanowire Structure", IEEE Electron Device Letters, 32, 12, 1698, 2011/12, SCI&EI
  • "射頻橫向擴散金氧半場效電晶體之溫度效應探討", 奈米通訊, 17, 4, 37, 2010/12, ELSE1

Conference papers

  • "A Flexible a-IGZO TFT ID-VG curves Prediction Based on Transfer Learning oriented Variational Autoencoders", 2024 International Conference on Fuzzy Theory and Its Applications (iFUZZY 2024), 高松, 2024/08/10
  • "Prediction of Electrical Characteristics of a-IGZO TFT Based on Transfer Learning-based Variational Autoencoder", IEEE International Conference on Systems, Man, and Cybernetics (SMC 2023), Hawaii, 2023/10/01
  • "The Electrical Properties of a-IGZO TFT Prediction Based on Variational Autoencoder Model", IEEE International Conference on Consumer Electronics (IEEE ICCE-TW ), PINGTUNG, 2023/07/17
  • "Performance Improvement of Homojunction a-IGZO TFT with Fluorine Doping", International Electron Devices and Materials Symposium (IEDMS 2022), Nantou, 2022/10/27
  • "Machine Learning-Based App r oach to Analyze the Effect of Density of States on the Electrical Properties of a-IGZO TFT", 2022 IEEE International Conference on Consumer Electronics - Taiwan, Taipei, 2022/07/06
  • "Prediction of a-IGZO TFT Electrical Properties Using Machine Learning Approach", Symposium on Nano-Device Circuits and Technologies, SNDCT, Hsinchu, 2022/05/19
  • "First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications", IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, 2021/12/11
  • "Comparison of X-parameter De-embedding Techniques for Intrinsic Large-Signal Characterization of Power FinFETs", Asia Pacific Microwave Conference (APMC) 2021, Brisbane, 2021/11/28
  • "Performance Improvement of Junctionless Poly-Si FinTET with Drain-Offset", International Electron Devices & Materials Symposium (IEDMS), Tainan, 2021/11/18
  • "High Voltage a-IGZO Thin Film Transistor for 3D IC Application", IEEE International Conference on Consumer Electronics - TAIWAN (IEEE 2021 ICCE-TW), PengHu, 2021/09/15
  • "RF Characteristics of Stacked Poly-Si Nanosheets Thin Film Transistors", Silicon Nanoelectronics Workshop (SNW), Virtual, 2021/06/13
  • "a-IGZO Thin Film Transistor for High Voltage Application", Symposium on Nano-Device Circuits and Technologies, SNDCT, HsinChu, 2021/05/20
  • "Stacked Gate-All-Around Nanosheets Thin-Film Transistors for the monolithic 3D IC applications", Symposium on Nano-Device Circuits and Technologies, SNDCT, HsinChu, 2021/05/20
  • "Characteristic of Junctionless Poly-Si FinTET", Symposium on Nano Device Technology (SNDT), HsinChu, 2020/05/21
  • "Large-Signal Characterization of Power FinFETs Based on X-Parameter Model", Asia-Pacific Microwave Conference (APMC), Marina Bay Sands, Singapore, 2019/12/10
  • "Low-Frequency Noise in GaN HEMTs and MIS-HEMTs under UV Illumination", International Electron Devices & Materials (IEDMS), New Taipei City, 2019/10/24
  • "Performance Improvement of RF FinTET with Field Plate", Symposium on Nano Device Technology (SNDT), HsinChu, 2019/04/26
  • "Reliability study of hybrid wide drain poly-Si FinTFT", International Symposium on Next Generation Electronics (ISNE), Taipei, 2018/05/07
  • "The impact of crystallization method on DC and RF characteristics of Poly-Si FinTFT", Symposium on Nano Device Technology (SNDT), HsinChu, 2018/04/20
  • "Fabrication and characterization of FinTFT for RF and Power Applications", 2018 International Conference on Smart Science-ICSS2018, Miyazu, Kyoto, 2018/03/30
  • "Simulation of the electrical characteristics of High-Voltage FinTFT with HKMG", 2018 International Conference on Smart Science-ICSS2018, Miyazu, Kyoto, 2018/03/30
  • "Tri-Gate High-Voltage Thin-Film Transistor With Various Layout Design", International Electron Devices & Materials Symposium 2017, HsinChu, 2017/09/06
  • "Tri-Gate High-Voltage Thin-Film Transistor for SoP Applications", International Electron Devices & Materials Symposium 2017, HsinChu, 2017/09/06
  • "RF FinFET Transistor with Wider S/D Extensions", Symposium on Nano Device Technology (SNDT), HsinChu, 2017/04/27
  • "Termination Design Issues on CMOS-compatible RF LDMOS", Symposium on Nano Device Technology (SNDT), HsinChu, 2016/05/12
  • "RF Characteristics of Poly-Si TFTs with HfO2 Gate Dielectric Fabricated by Microwave Annealing", 2015 International Conference on Solid State Devices and Materials (SSDM), Sapporo, 2015/09/27
  • "Trigate Field-Plated Poly-Si TFT with Extended Drift", Symposium on Nano Device Technology (SNDT), HsinChu, 2015/09/10
  • "Novel Trigate Field-Plated Poly-Si TFT with Improved Leakage Current and High On/Off Current Ratio", 2015 Silicon Nanoelectronics Workshop (SNW), Kyoto, 2015/06/14
  • "A Novel Hybrid Gate-All-Around High Voltage Thin Film Transistor with T-Shaped Metal Field Plate", 2014 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, 2014/06/08
  • "RF Characteristics of Wide-Drain LDMOS Transistors with Various Drift Doping Concentrations", Symposium on Nano Device Technology (SNDT), 新竹, 2014/05/01
  • "Effect of Drift Region Resistance on Temperature Characteristics of RF Power LDMOS Transistors", IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Seattle, 2013/06/02
  • "Characterization of RF LDMOS Transistors with Various P-body and Drift Region Implant Doses", Symposium on Nano Device Technology (SNDT), 新竹, 2012/04/26
  • "Low-Frequency Noise in Gate-All-Around Nanowire Poly-Si TFT Combined with nonvolatile SONOS memory", 2011 Silicon Nanoelectronics Workshop, 京都, 2011/06/12
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