"Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments", International Electron Devices and Materials Symposium 2019 (( topical collection), 2020/05, ELSE2
"Thermal stress probing the channel-length modulation effect of nano n-type FinFETs", Microelectronics Reliability, 2017/06, SCI
"Effect of nitrogen flow rate on TaN diffusion barrier layer deposited between a Cu layer and a Si-based substrate", Ceramics International, 2017/06, SCI
"Poly(4-vinylphenol) gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors", APL MATERIALS, 4, 4, 2016/04, SCI
"Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO 2 bilayer passivation under gate bias stress", Jpn. J. Appl. Phys., 55, 4, 2016/01, SCI
"Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process", Materials, 8, 1604-1613, 2015/04, SCI
"Characteristics of Fe-Si-B-Cr-C Powders Synthesized by the Spinning Water Atomization Process (SWAP) and its Application in Magnetic Core", Applied Mechanics and Materials, 749, 101-105, 2015/04, EI
"Preparation and Characterization of Molybdenum Thin Films by Direct-Current Magnetron Sputtering", Atlas Journal of Materials Science, 2(1), 54-59, 2015/03, ELSE2
"The enhancement of electromagnetic properties for Fe-Si-Cr alloy powders by sodium silicate treatmen", Journal of Alloys and Compounds, 637, 30-35, 2015/03, SCI
"Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment", Microelectronic Engineering, 138, 97-101, 2015/03, SCI
"Kink effect for 28nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures", International Journal of Nanotechnology, 12, 59-73, 2015/01, SCI
"Modification of Early Effect for 28-nm nMOSFETs Deposited With HfZrOx Dielectric After DPN Process Accompanying Nitrogen Concentrations", IEEE TRANSACTIONS ON PLASMA SCIENCE, 4, 2014/12, SCI
"A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme", materials, 7, 8, 5761-5768, 2014/08, SCI
"Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers", Int. J. of Materials and Product Technology, 49, 1, 25-40, 2014/06, SCI
"Teflon/SiO2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors", Organic Electronics, 14, 5, 2013/09, SCI
"Improved pentacene growth continuity for enhancing the performance of pentacene-based organic thin-film transistors", Organic Electronics, 13, 2924-2928, 2012/09, SCI
"High-Performance III-V MOSFET with Nano-stacked High-k Gate Dielectric and 3D Fin-shaped Structure", Nanoscale Research Letters, 2012/08, SCI
"Effect of SiO2 addition on the microstructure and microwave dielectric properties of ultra-low fire TiTe3O8 ceramics", Ceramics international, 35, 5, 5, 2009/07, SCI
"The study of GST Thin films", J. of Lee-Ming Insitute of Technology, 20, 2, 37-41, 2009/01, ELSE1
"Preparation of TiO2 thin films by laser ablation for photocatalytic applications", J. Vac. Sci. Technol, 26, 898-902, 2008/07, SCI
"Automatic identification of spatial defect patterns for semiconductor manufacturing", International Journal of Production Research, 44, 23, 17, 2006/12, SCI
專章著作
Electrical and Physical Characteristics of WO3 / Ag/WO3 Sandwich Structure Fabricated with Magnetic-Control Sputtering Metrology, 1, Avid Science, 978-93-88170-19-2, 2018/11/28
"Nano-node n-type Gate Dielectric Integrity and Uniformity Correlated to Nitridation Process", The 8th IEEE International Symposium on Next-Generation Electronic, 鄭州, 2019/10/09
"Middle Gate Bias Exposing CLM Effect of Nano n-channel FinFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
"Effective Surface Channel-length Effect of Nano-scale n-channel FinFETs Integrated with VT Doping Energies", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
"CLM Effect of Nano p-channel FinFETs Depending on VT Implant Energies", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
"A New Model Explaining the Saturation Current of Nano-MOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
"Feasible Programming Methods for 28nm-node nMOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
"Hot-Carrier Induced Degradation and Its Recovery in HK/MG NMOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
"Substrate Current Characteristics for 28 nm HK/MG NMOSFETs under HC Stresses", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
"Comparison of Nano-node n-channel FinFETs and 28nm HK/MG nMOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
"Performance of TaN as Diffusion Barrier Layer under N2 Flow-rate Control", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
"Nitrogen Flow Rate Relating Diffusion Behaviors of Copper in TaN Layers", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
"The Program Mechanism with CHEI/DAHC on Nano HK/MG CMOS Logic Process", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
"Thermal Stress Exposing Surface Channel-length Effect of Nano ntype FinFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Tapei, 2016/11/23
"THE INTEGRITY OF 28NM HK/MG NMOSFETS PROBED WITH DRAIN BIAS STRESS", International Conference on Electrical, Mechanical and Industrial Engineering 2016, Phuket, 2016/04/24
"DPN TREATMENT PLUS ANNEALING TEMPERATURES FOR 28NM HK/MG NMOSFETS WITH CHC STRESS", International Conference on Electrical, Mechanical and Industrial Engineering 2016, Phuket, 2016/04/24
"urface morphology and optical properties characteristics of Ga doping ZnO thin films prepared by DC magnetron sputtering", IUMRS-ICEM 2014, Taipei, 2014/06/10
"Self-Aligned Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistor Using A Two-Mask Process Without Etching-Stop Layer", 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), Kyoto, 2014/06/02
"Electrical quality of 28nm HK/MG MOSFETs with PDA and DPN treatment", International Symposium on Next-Generation Electronics (ISNE), Taoyuan, 2014/05/07
"CLM effect for 28nm stacked HK nmosfets after DPN treatment with different annealing temperatures", International Symposium on Next-Generation Electronics (ISNE), Taoyuan, 2014/05/07
"Electrical Performance of a-Si:H and Poly-Si TFTs with Heating Stress", International Symposium on Next-Generation Electronics (ISNE 2013), Kaoh siung, 2013/02/25
"High Quality of 0.18�慆 CMOS 5.2GHz Cascode LNA for RFID Tag Applications", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
"Si-Capping Thicknesses Impacting Compressive Strained MOSFETs with Temperature Effect", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
"Strained pMOSFETs with SiGe Channel and Embedded SiGe Source/Drain Stressor under Heating and Hot-Carrier Stresses", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
"Probing Moving Charge Distribution of Biaxial and CESL Strained PMOSFETs with Body Effect", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
"Body Effect of SiGe and CESL Strained Nano-node NMOSFETs on (100) Silicon Substrate", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
"Trend of Subthreshold Swing with DPN Process for 28nm N/PMOSFETs Mu", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
"The Reliability of a-Si TFTs with Gate/Drain Bias Stress at Different Temperature", International Electron Devices and Materials Symposium 2012, Kaohsiung, 2012/11/29
"Positive Bias Temperature Instability of a-Si:H TFTs and Recovery Mechanisms", International Electron Devices and Materials Symposium 2012, Kaohsiung, 2012/11/29
"Electrical Characteristics of Amorphous and Poly-Crystalline Thin-Film Transistors with Temperature Effect", International Electron Devices and Materials Symposium 2012, Kaohsiung, 2012/11/29
