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國立臺北科技大學 學術資源網

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王錫九副教授Wang, Shea-Jue

現職:
臺北科大/材料及資源工程系
聯絡方式:

期刊論文

  • "Effect of Al/Ti/Zr addition on mechanical properties of MAR-247 Ni based superalloy", 中國冶工程學會會刊, 65, 4, 10, 2021/12, ELSE1
  • "鋁、鈦、鋯元素添加對MAR-M247鎳基 超合金顯微組織之影響", 中國冶工程學會會刊, 64, 3, 74-81, 2020/09, ELSE1
  • "以鹽浴爐硬焊430不鋼及6061鋁合金之接合特性影響", 中國冶工程學會會刊, 64, 2, 55-63, 2020/06, ELSE1
  • "Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments", International Electron Devices and Materials Symposium 2019 (( topical collection), 2020/05, ELSE2
  • "添加鋁元素對IN713LC超合金微觀組織與機械性質影響", 鑄造工程學刊, 45, 4, 14, 2019/12, ELSE1
  • "鈦元素添加對IN713LC超合金顯微組織與機械性質影響", 鑄造工程學刊, 45, 3, 8, 2019/09, ELSE1
  • "硼添加對超合金IN713LC機械性質及 微觀結構之影響", 鑄造工程學刊, 44, 4, 7-12, 2018/12, ELSE1
  • "Electrical and Physical Characteristics of WO3/Ag/WO3 Sandwich Structure Fabricated with Magnetic-Control Sputtering Metrology", Sensors, 18, 9, 12, 2018/08, SCI
  • "Thermal stress probing the channel-length modulation effect of nano", Microelectronics Reliability, 83, 260-270, 2018/07, SCI
  • "Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment", Vacuum, 153, 117-121, 2018/07, SCI
  • "鋯元素添加對Inconel 713 LC鎳基超合金之影響", 鑄造工程學刊, 44, 1, 8-16, 2018/03, ELSE1
  • "Thermal stress probing the channel-length modulation effect of nano n-type FinFETs", Microelectronics Reliability, 2017/06, SCI
  • "Effect of nitrogen flow rate on TaN diffusion barrier layer deposited between a Cu layer and a Si-based substrate", Ceramics International, 2017/06, SCI
  • "Poly(4-vinylphenol) gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors", APL MATERIALS, 4, 4, 2016/04, SCI
  • "Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO 2 bilayer passivation under gate bias stress", Jpn. J. Appl. Phys., 55, 4, 2016/01, SCI
  • "Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process", Materials, 8, 1604-1613, 2015/04, SCI
  • "Characteristics of Fe-Si-B-Cr-C Powders Synthesized by the Spinning Water Atomization Process (SWAP) and its Application in Magnetic Core", Applied Mechanics and Materials, 749, 101-105, 2015/04, EI
  • "The enhancement of electromagnetic properties for Fe-Si-Cr alloy powders by sodium silicate treatmen", Journal of Alloys and Compounds, 637, 30-35, 2015/03, SCI
  • "Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment", Microelectronic Engineering, 138, 97-101, 2015/03, SCI
  • "Preparation and Characterization of Molybdenum Thin Films by Direct-Current Magnetron Sputtering", Atlas Journal of Materials Science, 2(1), 54-59, 2015/03, ELSE2
  • "Kink effect for 28nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures", International Journal of Nanotechnology, 12, 59-73, 2015/01, SCI
  • "Modification of Early Effect for 28-nm nMOSFETs Deposited With HfZrOx Dielectric After DPN Process Accompanying Nitrogen Concentrations", IEEE TRANSACTIONS ON PLASMA SCIENCE, 4, 2014/12, SCI
  • "A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme", materials, 7, 8, 5761-5768, 2014/08, SCI
  • "Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers", Int. J. of Materials and Product Technology, 49, 1, 25-40, 2014/06, SCI
  • "Teflon/SiO2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors", Organic Electronics, 14, 5, 2013/09, SCI
  • "Improved pentacene growth continuity for enhancing the performance of pentacene-based organic thin-film transistors", Organic Electronics, 13, 2924-2928, 2012/09, SCI
  • "High-Performance III-V MOSFET with Nano-stacked High-k Gate Dielectric and 3D Fin-shaped Structure", Nanoscale Research Letters, 2012/08, SCI
  • "雙層Ge2Sb2Te5薄膜之薄膜特性研究", 黎明學報, 23, 2, 8, 2012/07, ELSE1
  • "Effect of SiO2 addition on the microstructure and microwave dielectric properties of ultra-low fire TiTe3O8 ceramics", Ceramics international, 35, 5, 5, 2009/07, SCI
  • "The study of GST Thin films", J. of Lee-Ming Insitute of Technology, 20, 2, 37-41, 2009/01, ELSE1
  • "Preparation of TiO2 thin films by laser ablation for photocatalytic applications", J. Vac. Sci. Technol, 26, 898-902, 2008/07, SCI
  • "Organic Modification of Synthesized Clay Magadiite", Ceramics International, 33, 4, 5, 2007/05, SCI
  • "Automatic identification of spatial defect patterns for semiconductor manufacturing", International Journal of Production Research, 44, 23, 17, 2006/12, SCI

專章著作

  • Electrical and Physical Characteristics of WO3 / Ag/WO3 Sandwich Structure Fabricated with Magnetic-Control Sputtering Metrology, 1, Avid Science, 978-93-88170-19-2, 2018/11/28

研討會論文

  • "優化熱處理及添加鋁對鎳基超合金In713LC之影響", 中國冶工程學會年會, 苗栗, 2020/10/23
  • "鋁鈦鋯元素添加對MAR-247超合金顯微組織影響", 礦冶工程學會年會, 台南成功大學, 2019/11/19
  • "以鹽浴爐硬焊430不鋼及6061鋁合金之接合特性影響", 礦冶工程學會年會, 台南成大, 2019/11/19
  • "Nano-node n-type Gate Dielectric Integrity and Uniformity Correlated to Nitridation Process", The 8th IEEE International Symposium on Next-Generation Electronic, 鄭州, 2019/10/09
  • "Substrate Current Characteristics for 28 nm HK/MG NMOSFETs under HC Stresses", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Comparison of Nano-node n-channel FinFETs and 28nm HK/MG nMOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Performance of TaN as Diffusion Barrier Layer under N2 Flow-rate Control", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Nitrogen Flow Rate Relating Diffusion Behaviors of Copper in TaN Layers", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "The Program Mechanism with CHEI/DAHC on Nano HK/MG CMOS Logic Process", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Middle Gate Bias Exposing CLM Effect of Nano n-channel FinFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Effective Surface Channel-length Effect of Nano-scale n-channel FinFETs Integrated with VT Doping Energies", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "CLM Effect of Nano p-channel FinFETs Depending on VT Implant Energies", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "A New Model Explaining the Saturation Current of Nano-MOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Feasible Programming Methods for 28nm-node nMOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Hot-Carrier Induced Degradation and Its Recovery in HK/MG NMOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Thermal Stress Exposing Surface Channel-length Effect of Nano ntype FinFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Tapei, 2016/11/23
  • "THE INTEGRITY OF 28NM HK/MG NMOSFETS PROBED WITH DRAIN BIAS STRESS", International Conference on Electrical, Mechanical and Industrial Engineering 2016, Phuket, 2016/04/24
  • "DPN TREATMENT PLUS ANNEALING TEMPERATURES FOR 28NM HK/MG NMOSFETS WITH CHC STRESS", International Conference on Electrical, Mechanical and Industrial Engineering 2016, Phuket, 2016/04/24
  • "濺鍍製程對鉭薄膜結構分析及特性研究", 中科院104年科專產學研分包/委託研究計畫招商說明會, 台北市, 2014/11/28
  • "urface morphology and optical properties characteristics of Ga doping ZnO thin films prepared by DC magnetron sputtering", IUMRS-ICEM 2014, Taipei, 2014/06/10
  • "Self-Aligned Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistor Using A Two-Mask Process Without Etching-Stop Layer", 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), Kyoto, 2014/06/02
  • "FeSiBCrC非晶磁性粉末的絕緣披覆之研究", 2014陶業年會, 台北, 2014/05/23
  • "FeSiBCrC非晶磁性粉末的退火製程之研究", 2014陶業年會, 台北, 2014/05/23
  • "以直流濺鍍法製備氧化鋅薄膜之特性研究", 2014陶業年會, Taipei, 2014/05/23
  • "磁控濺鍍製備雙層鉬薄膜背電極之研究", 2014陶業年會, Taipei, 2014/05/23
  • "不同鈍化製程對Fe-Si-Cr合金粉表面改質後之磁性質影響研究", 2014陶業年會, Taipei, 2014/05/23
  • "Electrical quality of 28nm HK/MG MOSFETs with PDA and DPN treatment", International Symposium on Next-Generation Electronics (ISNE), Taoyuan, 2014/05/07
  • "CLM effect for 28nm stacked HK nmosfets after DPN treatment with different annealing temperatures", International Symposium on Next-Generation Electronics (ISNE), Taoyuan, 2014/05/07
  • "Electrical Performance of a-Si:H and Poly-Si TFTs with Heating Stress", International Symposium on Next-Generation Electronics (ISNE 2013), Kaoh siung, 2013/02/25
  • "High Quality of 0.18�慆 CMOS 5.2GHz Cascode LNA for RFID Tag Applications", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
  • "Si-Capping Thicknesses Impacting Compressive Strained MOSFETs with Temperature Effect", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
  • "Strained pMOSFETs with SiGe Channel and Embedded SiGe Source/Drain Stressor under Heating and Hot-Carrier Stresses", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
  • "Probing Moving Charge Distribution of Biaxial and CESL Strained PMOSFETs with Body Effect", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
  • "Body Effect of SiGe and CESL Strained Nano-node NMOSFETs on (100) Silicon Substrate", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
  • "Trend of Subthreshold Swing with DPN Process for 28nm N/PMOSFETs Mu", International Symposium on Next-Generation Electronics (ISNE 2013), Kaohsiung, 2013/02/25
  • "The Reliability of a-Si TFTs with Gate/Drain Bias Stress at Different Temperature", International Electron Devices and Materials Symposium 2012, Kaohsiung, 2012/11/29
  • "Positive Bias Temperature Instability of a-Si:H TFTs and Recovery Mechanisms", International Electron Devices and Materials Symposium 2012, Kaohsiung, 2012/11/29
  • "Electrical Characteristics of Amorphous and Poly-Crystalline Thin-Film Transistors with Temperature Effect", International Electron Devices and Materials Symposium 2012, Kaohsiung, 2012/11/29
  • "相變化薄膜表面性質及加工研究", 中國材料科學學會2009年會, HuiLang, 2009/11/26
  • "Ge2Sb2Te5相變化材料的薄膜製程研究", 中國材料科學學會2009年會, HuiLang, 2009/11/26
  • "The nitrogen-doped diamond-like carbon and application to solar cells", NDNC conference, Michigan, 2009/06/09
  • "以射頻磁控濺鍍製備p型類鑽碳薄膜之研究", 中華民國陶業研究學會2009 年會, Taipei, 2009/05/22
  • "氮摻雜類鑽碳膜之製備及太陽能電池應用之研究", 中華民國陶業研究學會2009年會, Taipei, 2009/05/22
  • "光學塑膠基材之水、氧氣穿透率測量技術", 中國材料科學學會2008年會, 台北市, 2008/11/21
  • "Preparation of TiO2 thin films by laser ablation for photocatalytic applications", AVS 54th International Symposium, Seattle, 2007/10/14
  • "機械式遲控溫控器之參數研究", 中國材料科學學會, 台南市, 2006/11/24
  • "電流控制雙金屬速控溫控器", 中國材料科學學會, 台南市, 2006/11/24
  • "機械式雙金屬溫控器之力學分析", 中國材料科學學會, 台南市, 2006/11/24
  • "Addition of LiF on device performance of non-volatile organic bistable memory", 陶業年會, 2005/05/25
  • "Addition of LiF on device performance of non-volatile organic bistable memory", 中華民國 94年陶業年會, 台南市, 2005/05/25
  • "有機發光照明元件之電路與亮度模擬", Taiwan Display Conference, 台北市, 2004/06/10
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