"Relations among composition, microstructure, and mechanical and dielectric properties from 1 MHz to 100 GHz of aluminum nitride substrates", Journal of Alloys and Compounds, 1005, 176147, 2024/11, SCI
"Artificial Intelligence enabled Biodegradable All-Textile Sensor for Smart Monitoring and Recognition", Nano Energy, 130, 110118, 2024/08, SCI
"Nanoscale Ferroelectric Domain Switching and Thickness Scaling Impact in Undoped Hafnium-Oxide Ferroelectric Devices", Thin Solid Films, 799, 140400, 2024/06, SCI
"Ferroelectric Memory Devices Using Hafnium Aluminum Oxides and Remote Plasma-Treated Electrodes for Sustainable Energy-Efficient Electronics", Materials Research Express, 11, 046404, 2024/03, SCI
"Oxide-Based Synaptic Transistors Gated by Solid Biopolymer Electrolytes", Journal of Materials Science, 58, 11740–11747, 2023/07, SCI
"Bioinspired Artificial Visual System Based on 2D WSe2 Synapse Array", Advanced Functional Materials, 33, 2303539, 2023/05, SCI
"Development of p-type zinc oxide nanorods on zirconium-based metallic glass nanotube arrays by facile hydrothermal method for gas sensing applications", Chemical Engineering Journal, 463, 142381, 2023/05, SCI
"Ferroelectricity and Oxide Reliability of Stacked Hafnium-Zirconium-Oxide Devices", Materials, 16, 3306, 2023/04, SCI
"Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application", Semiconductor Science and Technology, 38, 055012, 2023/03, SCI
"The Impact of charges at dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs", Semiconductor Science and Technology, 38, 045003, 2023/02, SCI
"Emerging Two-Dimensional Metal Oxides: From Synthesis to Device Integration", Advanced Materials, 2207774, 2022/11, SCI
"Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering", IEEE Journal of the Electron Devices Society, 10, 947 – 952, 2022/10, SCI
"Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film", ECS Journal of Solid State Science and Technology, 11, 083013, 2022/08, SCI
"Electrical Characteristics Investigation of Ferroelectric Memories Using Stacked and Mixed Hafnium Zirconium Oxides", Thin Solid Films, 757, 139395, 2022/07, SCI
"Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment", Thin Solid Films, 755, 139345, 2022/06, SCI
"Effect of Capping Layer on the Ferroelectricity of Hafnium Oxide", Thin Solid Films, 753, 1, 139274, 2022/04, SCI
"An Investigation into Magnetic Properties, Sintering Shrinkage Characteristics, and Formability of Isotropic Barium Ferrite Permanent Magnets", IEEE Transactions on Magnetics, 58, 4, 2101309, 2022/03, SCI
"Preparation and magnetic properties of lanthanum- and cobalt- substituted M-type Sr base sintered magnets", Japanese Journal of Applied Physics, 60, 115504, 2021/10, SCI
"Investigation on the La Replacement and Little Additive Modification of High-Performance Permanent Magnetic Strontium-Ferrite", Processes, 9, 6, 1034, 2021/06, SCI
"Development of Optimum Preparation Conditions of Fe-Deficient M-type Ca-Sr-La System Hexagonal Ferrite Magnet", IEEE Transactions on Magnetics, 57, 2101307, 2021/02, SCI
"Impact of Stress and Doping Effects on the Polarization Behavior and Electrical Characteristics of Hafnium-Zirconium Oxides", Ceramics International, 47, 2864-2868, 2021/01, SCI
"Integration of Dielectric and Ferroelectric Hafnium Aluminum Oxides for Thin Film Transistor Applications", Physica Status Solidi- Rapid Research Letters, 14, 2000258, 2020/12, SCI
"Experimental Investigation of Thermal Annealing and Ferroelectric Size Effects for Hafnium-Zirconium Oxide Devices", Coatings, 10, 733, 2020/12, SCI
"Preparation and Magnetic Properties of High Performance Ca–Sr based M-type Hexagonal Ferrites", Results in Materials, 8, 100150, 2020/12, SCI
"High Performance Negative Capacitance Field-Effect Transistor Featuring Low Off-State Current, High On/Off Current Ratio, and Steep Sub-60 mV/dec Swing", Japanese Journal of Applied Physics, 59, GGA01-1~ SGGA01-4, 2020/12, SCI
"Recent advance on optical and optoelectronic data storage based on luminescent nanomaterials", Nanoscale, 12, 23391-23423, 2020/11, SCI
"Organic small molecules based RRAM for data storage and neuromorphic computing", J. Mater. Chem. C, 8, 12714-12738, 2020/10, SCI
"Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing", IEEE Journal of the Electron Devices Society, 8, 485-489, 2020/08, SCI
"A Comparative Study of Metal-Ferroelectric-Metal Devices Using Doped- and Stacked- Hafnium Zirconium Oxides", Thin Solid Films, 701, 137927, 2020/07, SCI
"Physical Modeling of p-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors", IEEE Journal of the Electron Devices Society, 8, 948-958, 2020/07, SCI
"AlGaN/GaN High-Electron-Mobility Transistors on a Silicon Substrate Under Uniaxial Tensile Strain", ECS Journal of Solid State Science and Technology, 9, 045017, 2020/05, SCI
"Mechanical Tensile Strain for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on a Silicon-on-Insulator Substrate", Journal of Alloys and Compounds, 820, 153178, 2020/04, SCI
"High Performance Negative Capacitance Field-Effect Transistor Featuring Low Off-State Current, High On/Off Current Ratio, and Steep Sub-60 mV/dec Swing", Japanese Journal of Applied Physics, 2019/12, SCI
"Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect", IEEE Transactions on Nanotechnology, 19, 89 - 93, 2019/12, SCI
"Mechanical Tensile Strain for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on a Silicon-on-Insulator Substrate", J. Alloys Compd., 820, 153178, 2019/11, SCI
"Progress and Challenges in P-Type Oxide-Based Thin Film Transistors", Nanotechnology Reviews, 8, 422-443, 2019/10, SCI
"Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering", ECS Journal of Solid State Science and Technology, 8, 10, P553-P556, 2019/10, SCI
"Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides", Physica Status Solidi- Rapid Research Letters, 13, 1900414, 2019/09, SCI
"Low-Voltage Metal-Oxide Thin Film Transistors Using P-type Tin-Oxide Semiconductors", Journal of Nanoscience and Nanotechnology, 19, 5619-5623, 2019/09, SCI
"Investigation on Polarization Characteristics of Ferroelectric Memories with Thermally Stable Hafnium Aluminum Oxides", Vacuum, 166, 11-14, 2019/04, SCI
"Effect of plasma fluorination in p-type SnO TFTs: Experiments, Modeling and Simulation", IEEE Transactions on Electron Devices, 66, 1314-1321, 2019/03, SCI
"Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows", Journal of Nanoscience and Nanotechnology, 19, 1-4, 2019/01, SCI
"Implementation of Dopant-Free Hafnium-Oxide Negative Capacitance Field-Effect Transistor", IEEE Transactions on Electron Devices, 66, 1, 825-828, 2019/01, SCI
"Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides", IEEE Transactions on Electron Devices, 66, 2, 1082 - 1086, 2019/01, SCI
"Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors", Physica Status Solidi- Rapid Research Letters, 1800573, 2018/12, SCI
"Effect of Particle Size of as-milled powders on Microstructural and Magnetic Properties of Y3MnxAl0.8-xFe4.2O12 Ferrites", Journal of the American Ceramic Society, NA, 1-10, 2018/11, SCI
"Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering", Physica Status Solidi- Rapid Research Letters, 12, 1800493, 2018/09, SCI
"Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels", ECS Journal of Solid State Science and Technology, 7, 12, Q242-Q245, 2018/08, SCI
"On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate Stack", ECS Journal of Solid State Science and Technology, 7, 11, P640-P646, 2018/07, SCI
"Investigation of Double Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure", IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, 10, 4200-4205, 2017/10, SCI
"Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY, 16, 5, 876-879, 2017/09, SCI
"Electrical Instability of InGaZnO Thin Film Transistors with and without Titanium Sub-Oxide Layer Under Light Illumination", Appl. Phys. A, 123, 188, 1-5, 2017/02, SCI
研討會論文
"Ferroelectricity of Stacked Ferroelectric and Antiferroelectric Hafnium-Zirconium Oxide", The 17th International Symposium on Sputtering and Plasma Processes (2024 ISSP), Kyoto, 2024/07/02
"Effect of Nitrided Hafnium Oxide Buffer Layer on the Electrical Characteristics of Hafnium Aluminum Oxide Ferroelectric Device", The 8th International Symposium on Advanced Ceramics and Technology for Sustainable Engineering Applications(2024 ACTSEA), 台北, 2024/05/09
"Enhancement of Ferroelectricity in Hafnium Aluminum Oxides Using Dielectric Capping Layer and Remote Plasma Nitridation", The 8th International Symposium on Advanced Ceramics and Technology for Sustainable Engineering Applications(2024 ACTSEA), 台北, 2024/05/09
"Nanoscale Multi-Domain Switching and Thickness Scaling Impact in Dopant-Free Hafnium-Oxide Ferroelectric Devices", 2023 TACT International Thin Films Conference, 台北, 2023/11/12
"Effect of Deposition Sequence on the Electrical Characteristics of Hafnium Aluminum Oxide Under Thickness Scaling", 2023 TACT International Thin Films Conference, 台北, 2023/11/12
"Electrical Characteristics Investigation of Ferroelectric Hafnium-Aluminum Oxide Memory Using Plasma-Treated Bottom Electrode", 2023 TACT International Thin Films Conference, 台北, 2023/11/12
"Improvement of Electrical Characteristics in HfAlOx Ferroelectric Field-Effect Transistor Using AlOx Capping Layer", 2023 TACT International Thin Films Conference, 台北, 2023/11/12
"Interface Engineering Through Nitrogen Plasma Passivation for Improving Switching Performance in Highly-Scaled Ferroelectric Devices", 2021 TACT International Thin Films Conference, 臺北, 2021/11/15
"Electrical Characteristics Investigation of Ferroelectric Memories Using Stacked and Mixed Hafnium Zirconium Oxides", 2021 TACT International Thin Films Conference, 臺北, 2021/11/15
"Effect of Capping Layer on the Ferroelectricity of Hafnium Oxide", 2021 TACT International Thin Films Conference, 臺北, 2021/11/15
"Performance Investigation of Dopant-Free Ferroelectric Hafnium Oxide Transistor Using Remote Nitrogen Plasma Treatment", 2021 TACT International Thin Films Conference, 臺北, 2021/11/15
"A Comparative Study of Metal-Ferroelectric-Metal Devices Using Doped- and Stacked- Hafnium Zirconium Oxides", 2019 TACT International Thin Films Conference, 台北, 2019/11/17
"Ferroelectric Polarization Characteristics of Ferroelectric Hafnium Aluminum Oxide Capacitor by Using Hafnium Nitride Electrode", 2019 TACT International Thin Films Conference, Taipei, 2019/11/17
"Investigation on Switching Characteristics of Metal-Ferroelectric-Metal Memory Devices with Hafnium Zirconium Oxides under Ferroelectric Film Annealing", 2019 International Microprocesses and Nanotechnology Conference (MNC), 廣島, 2019/10/28
"High Performance Negative Capacitance Field Effect Transistor Featuring Low Off State Current, High On/Off Current Ratio, and Steep Sub 60 mV/dec Swing", International Conference on Solid State Devices and Materials (SSDM), Aichi, 2019/09/02
"Investigation of Phase Transformation in HfO2 Ferroelectric Capacitor by Means of a ZrO2 Capping Layer", IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xian, 2019/06/12
"Ferroelectric Characterization of Hafnium-Oxide-Based Ferroelectric Memories with Remote Nitrogen Plasma Treatments", IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xian, 2019/06/12
"Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching", IEEE Symp. on VLSI Technology and Circuits (VLSI), Kyoto, 2019/06/09
"Impact of Negative Capacitance on P-Type Tin-Oxide Thin Film Transistor", 2019 International Thin Film Transistor Conference, 沖繩, 2019/02/28
"Characteristic Simulation of Ferroelectric Hafnium-Aluminum-Oxide Devices Integrated with Aluminum Buffer Layer", 2018 International Electron Devices & Materials Symposium, 基隆, 2018/11/14
"Investigation on Polarization Characteristics of Ferroelectric Memories with Thermally Stable Hafnium Aluminum Oxides", 2018 International Electron Devices & Materials Symposium, 基隆, 2018/11/14
"Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory", Electron Devices Technology and Manufacturing (EDTM), 神戶, 2018/03/13
"Interface Engineering of Ferroelectric Negative Capacitance FET for Hysteresis-Free Switch and Reliability Improvement", IEEE International Reliability Physics Symposium (IRPS), 加州, 2018/03/11
"Ferroelectric Hafnium-Oxide Memories with Metal-Gate Strained Engineering", TACT 2017 International Thin Films Conference, 花蓮, 2017/10/15
"Strain-Enhanced Ferroelectric Aluminum-Doped Hafnium Oxides for Volatile and Nonvolatile Memories Applications", Solid State Devices and Materials (SSDM), 仙台, 2017/09/19
"Carrier Transport Mechanism and Electrical Properties of P-Type Tin-Oxide Thin-Film Transistors with Channel Thickness Scaling", International Symposium on Metastable, Amorphous and Nanostructured Materials, Donostia-San Sebastian, 2017/06/18
"Electrical characterization of p-type metal-oxide thin film transistors using tin-rich tin-oxide semiconductor materials", IEEE The 6th International Symposium on Next-Generation Electronics (ISNE), 基隆, 2017/05/23
