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國立臺北科技大學 學術資源網

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徐曉萱副教授Hsiao-Hsuan HSU

現職:
臺北科大/材料科學與工程研究所
聯絡方式:

期刊論文

  • "Oxide-Based Synaptic Transistors Gated by Solid Biopolymer Electrolytes", Journal of Materials Science, 58, 11740–11747, 2023/07, SCI
  • "Bioinspired Artificial Visual System Based on 2D WSe2 Synapse Array", Advanced Functional Materials, 33, 2303539, 2023/05, SCI
  • "Development of p-type zinc oxide nanorods on zirconium-based metallic glass nanotube arrays by facile hydrothermal method for gas sensing applications", Chemical Engineering Journal, 463, 142381, 2023/05, SCI
  • "Ferroelectricity and Oxide Reliability of Stacked Hafnium-Zirconium-Oxide Devices", Materials, 16, 3306, 2023/04, SCI
  • "Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application", Semiconductor Science and Technology, 38, 055012, 2023/03, SCI
  • "The Impact of charges at dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs", Semiconductor Science and Technology, 38, 045003, 2023/02, SCI
  • "Emerging Two-Dimensional Metal Oxides: From Synthesis to Device Integration", Advanced Materials, 2207774, 2022/11, SCI
  • "Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering", IEEE Journal of the Electron Devices Society, 10, 947 – 952, 2022/10, SCI
  • "Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film", ECS Journal of Solid State Science and Technology, 11, 083013, 2022/08, SCI
  • "Electrical Characteristics Investigation of Ferroelectric Memories Using Stacked and Mixed Hafnium Zirconium Oxides", Thin Solid Films, 757, 139395, 2022/07, SCI
  • "Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment", Thin Solid Films, 755, 139345, 2022/06, SCI
  • "Effect of Capping Layer on the Ferroelectricity of Hafnium Oxide", Thin Solid Films, 753, 1, 139274, 2022/04, SCI
  • "An Investigation into Magnetic Properties, Sintering Shrinkage Characteristics, and Formability of Isotropic Barium Ferrite Permanent Magnets", IEEE Transactions on Magnetics, 58, 4, 2101309, 2022/03, SCI
  • "Preparation and magnetic properties of lanthanum- and cobalt- substituted M-type Sr base sintered magnets", Japanese Journal of Applied Physics, 60, 115504, 2021/10, SCI
  • "Investigation on the La Replacement and Little Additive Modification of High-Performance Permanent Magnetic Strontium-Ferrite", Processes, 9, 6, 1034, 2021/06, SCI
  • "Development of Optimum Preparation Conditions of Fe-Deficient M-type Ca-Sr-La System Hexagonal Ferrite Magnet", IEEE Transactions on Magnetics, 57, 2101307, 2021/02, SCI
  • "Impact of Stress and Doping Effects on the Polarization Behavior and Electrical Characteristics of Hafnium-Zirconium Oxides", Ceramics International, 47, 2864-2868, 2021/01, SCI
  • "Integration of Dielectric and Ferroelectric Hafnium Aluminum Oxides for Thin Film Transistor Applications", Physica Status Solidi- Rapid Research Letters, 14, 2000258, 2020/12, SCI
  • "Experimental Investigation of Thermal Annealing and Ferroelectric Size Effects for Hafnium-Zirconium Oxide Devices", Coatings, 10, 733, 2020/12, SCI
  • "Preparation and Magnetic Properties of High Performance Ca–Sr based M-type Hexagonal Ferrites", Results in Materials, 8, 100150, 2020/12, SCI
  • "High Performance Negative Capacitance Field-Effect Transistor Featuring Low Off-State Current, High On/Off Current Ratio, and Steep Sub-60 mV/dec Swing", Japanese Journal of Applied Physics, 59, GGA01-1~ SGGA01-4, 2020/12, SCI
  • "Recent advance on optical and optoelectronic data storage based on luminescent nanomaterials", Nanoscale, 12, 23391-23423, 2020/11, SCI
  • "Organic small molecules based RRAM for data storage and neuromorphic computing", J. Mater. Chem. C, 8, 12714-12738, 2020/10, SCI
  • "Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing", IEEE Journal of the Electron Devices Society, 8, 485-489, 2020/08, SCI
  • "A Comparative Study of Metal-Ferroelectric-Metal Devices Using Doped- and Stacked- Hafnium Zirconium Oxides", Thin Solid Films, 701, 137927, 2020/07, SCI
  • "Physical Modeling of p-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors", IEEE Journal of the Electron Devices Society, 8, 948-958, 2020/07, SCI
  • "AlGaN/GaN High-Electron-Mobility Transistors on a Silicon Substrate Under Uniaxial Tensile Strain", ECS Journal of Solid State Science and Technology, 9, 045017, 2020/05, SCI
  • "Mechanical Tensile Strain for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on a Silicon-on-Insulator Substrate", Journal of Alloys and Compounds, 820, 153178, 2020/04, SCI
  • "Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect", IEEE Transactions on Nanotechnology, 19, 89 - 93, 2019/12, SCI
  • "High Performance Negative Capacitance Field-Effect Transistor Featuring Low Off-State Current, High On/Off Current Ratio, and Steep Sub-60 mV/dec Swing", Japanese Journal of Applied Physics, 2019/12, SCI
  • "Mechanical Tensile Strain for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on a Silicon-on-Insulator Substrate", J. Alloys Compd., 820, 153178, 2019/11, SCI
  • "Progress and Challenges in P-Type Oxide-Based Thin Film Transistors", Nanotechnology Reviews, 8, 422-443, 2019/10, SCI
  • "Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering", ECS Journal of Solid State Science and Technology, 8, 10, P553-P556, 2019/10, SCI
  • "Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides", Physica Status Solidi- Rapid Research Letters, 13, 1900414, 2019/09, SCI
  • "Low-Voltage Metal-Oxide Thin Film Transistors Using P-type Tin-Oxide Semiconductors", Journal of Nanoscience and Nanotechnology, 19, 5619-5623, 2019/09, SCI
  • "Investigation on Polarization Characteristics of Ferroelectric Memories with Thermally Stable Hafnium Aluminum Oxides", Vacuum, 166, 11-14, 2019/04, SCI
  • "Effect of plasma fluorination in p-type SnO TFTs: Experiments, Modeling and Simulation", IEEE Transactions on Electron Devices, 66, 1314-1321, 2019/03, SCI
  • "Implementation of Dopant-Free Hafnium-Oxide Negative Capacitance Field-Effect Transistor", IEEE Transactions on Electron Devices, 66, 1, 825-828, 2019/01, SCI
  • "Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides", IEEE Transactions on Electron Devices, 66, 2, 1082 - 1086, 2019/01, SCI
  • "Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows", Journal of Nanoscience and Nanotechnology, 19, 1-4, 2019/01, SCI
  • "Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors", Physica Status Solidi- Rapid Research Letters, 1800573, 2018/12, SCI
  • "Effect of Particle Size of as-milled powders on Microstructural and Magnetic Properties of Y3MnxAl0.8-xFe4.2O12 Ferrites", Journal of the American Ceramic Society, NA, 1-10, 2018/11, SCI
  • "Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering", Physica Status Solidi- Rapid Research Letters, 12, 1800493, 2018/09, SCI
  • "Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels", ECS Journal of Solid State Science and Technology, 7, 12, Q242-Q245, 2018/08, SCI
  • "On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate Stack", ECS Journal of Solid State Science and Technology, 7, 11, P640-P646, 2018/07, SCI
  • "Investigation of Double Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure", IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, 10, 4200-4205, 2017/10, SCI
  • "Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY, 16, 5, 876-879, 2017/09, SCI
  • "Electrical Instability of InGaZnO Thin Film Transistors with and without Titanium Sub-Oxide Layer Under Light Illumination", Appl. Phys. A, 123, 188, 1-5, 2017/02, SCI

研討會論文

  • "Nanoscale Multi-Domain Switching and Thickness Scaling Impact in Dopant-Free Hafnium-Oxide Ferroelectric Devices", 2023 TACT International Thin Films Conference, 台北, 2023/11/12
  • "Effect of Deposition Sequence on the Electrical Characteristics of Hafnium Aluminum Oxide Under Thickness Scaling", 2023 TACT International Thin Films Conference, 台北, 2023/11/12
  • "Electrical Characteristics Investigation of Ferroelectric Hafnium-Aluminum Oxide Memory Using Plasma-Treated Bottom Electrode", 2023 TACT International Thin Films Conference, 台北, 2023/11/12
  • "Improvement of Electrical Characteristics in HfAlOx Ferroelectric Field-Effect Transistor Using AlOx Capping Layer", 2023 TACT International Thin Films Conference, 台北, 2023/11/12
  • "Electrical Characteristics Investigation of Ferroelectric Memories Using Stacked and Mixed Hafnium Zirconium Oxides", 2021 TACT International Thin Films Conference, 臺北, 2021/11/15
  • "Effect of Capping Layer on the Ferroelectricity of Hafnium Oxide", 2021 TACT International Thin Films Conference, 臺北, 2021/11/15
  • "Performance Investigation of Dopant-Free Ferroelectric Hafnium Oxide Transistor Using Remote Nitrogen Plasma Treatment", 2021 TACT International Thin Films Conference, 臺北, 2021/11/15
  • "Interface Engineering Through Nitrogen Plasma Passivation for Improving Switching Performance in Highly-Scaled Ferroelectric Devices", 2021 TACT International Thin Films Conference, 臺北, 2021/11/15
  • "太陽能再生矽基板之氧化物陶瓷電容製備與元件特性探討", 2021台灣陶瓷年會, 台南, 2021/05/21
  • "以傳輸線模型探討太陽能超薄再生矽晶圓之接觸性質", 109年中國材料科學年會, 臺北, 2020/11/06
  • "A Comparative Study of Metal-Ferroelectric-Metal Devices Using Doped- and Stacked- Hafnium Zirconium Oxides", 2019 TACT International Thin Films Conference, 台北, 2019/11/17
  • "Ferroelectric Polarization Characteristics of Ferroelectric Hafnium Aluminum Oxide Capacitor by Using Hafnium Nitride Electrode", 2019 TACT International Thin Films Conference, Taipei, 2019/11/17
  • "Investigation on Switching Characteristics of Metal-Ferroelectric-Metal Memory Devices with Hafnium Zirconium Oxides under Ferroelectric Film Annealing", 2019 International Microprocesses and Nanotechnology Conference (MNC), 廣島, 2019/10/28
  • "High Performance Negative Capacitance Field Effect Transistor Featuring Low Off State Current, High On/Off Current Ratio, and Steep Sub 60 mV/dec Swing", International Conference on Solid State Devices and Materials (SSDM), Aichi, 2019/09/02
  • "Investigation of Phase Transformation in HfO2 Ferroelectric Capacitor by Means of a ZrO2 Capping Layer", IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xian, 2019/06/12
  • "Ferroelectric Characterization of Hafnium-Oxide-Based Ferroelectric Memories with Remote Nitrogen Plasma Treatments", IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xian, 2019/06/12
  • "Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching", IEEE Symp. on VLSI Technology and Circuits (VLSI), Kyoto, 2019/06/09
  • "Impact of Negative Capacitance on P-Type Tin-Oxide Thin Film Transistor", 2019 International Thin Film Transistor Conference, 沖繩, 2019/02/28
  • "Characteristic Simulation of Ferroelectric Hafnium-Aluminum-Oxide Devices Integrated with Aluminum Buffer Layer", 2018 International Electron Devices & Materials Symposium, 基隆, 2018/11/14
  • "Investigation on Polarization Characteristics of Ferroelectric Memories with Thermally Stable Hafnium Aluminum Oxides", 2018 International Electron Devices & Materials Symposium, 基隆, 2018/11/14
  • "Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory", Electron Devices Technology and Manufacturing (EDTM), 神戶, 2018/03/13
  • "Interface Engineering of Ferroelectric Negative Capacitance FET for Hysteresis-Free Switch and Reliability Improvement", IEEE International Reliability Physics Symposium (IRPS), 加州, 2018/03/11
  • "Ferroelectric Hafnium-Oxide Memories with Metal-Gate Strained Engineering", TACT 2017 International Thin Films Conference, 花蓮, 2017/10/15
  • "Strain-Enhanced Ferroelectric Aluminum-Doped Hafnium Oxides for Volatile and Nonvolatile Memories Applications", Solid State Devices and Materials (SSDM), 仙台, 2017/09/19
  • "Carrier Transport Mechanism and Electrical Properties of P-Type Tin-Oxide Thin-Film Transistors with Channel Thickness Scaling", International Symposium on Metastable, Amorphous and Nanostructured Materials, Donostia-San Sebastian, 2017/06/18
  • "Electrical characterization of p-type metal-oxide thin film transistors using tin-rich tin-oxide semiconductor materials", IEEE The 6th International Symposium on Next-Generation Electronics (ISNE), 基隆, 2017/05/23
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