:::
研討會論文
- "Performance Improvement of Homojunction a-IGZO TFT with Fluorine Doping", International Electron Devices and Materials Symposium (IEDMS 2022), Nantou, 2022/10/27
- "Machine Learning-Based App r oach to Analyze the Effect of Density of States on the Electrical Properties of a-IGZO TFT", 2022 IEEE International Conference on Consumer Electronics - Taiwan, Taipei, 2022/07/06
- "Prediction of a-IGZO TFT Electrical Properties Using Machine Learning Approach", Symposium on Nano-Device Circuits and Technologies, SNDCT, Hsinchu, 2022/05/19
- "First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications", IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, 2021/12/11
- "Comparison of X-parameter De-embedding Techniques for Intrinsic Large-Signal Characterization of Power FinFETs", Asia Pacific Microwave Conference (APMC) 2021, Brisbane, 2021/11/28
- "Performance Improvement of Junctionless Poly-Si FinTET with Drain-Offset", International Electron Devices & Materials Symposium (IEDMS), Tainan, 2021/11/18
- "High Voltage a-IGZO Thin Film Transistor for 3D IC Application", IEEE International Conference on Consumer Electronics - TAIWAN (IEEE 2021 ICCE-TW), PengHu, 2021/09/15
- "RF Characteristics of Stacked Poly-Si Nanosheets Thin Film Transistors", Silicon Nanoelectronics Workshop (SNW), Virtual, 2021/06/13
- "a-IGZO Thin Film Transistor for High Voltage Application", Symposium on Nano-Device Circuits and Technologies, SNDCT, HsinChu, 2021/05/20
- "Stacked Gate-All-Around Nanosheets Thin-Film Transistors for the monolithic 3D IC applications", Symposium on Nano-Device Circuits and Technologies, SNDCT, HsinChu, 2021/05/20
- "Characteristic of Junctionless Poly-Si FinTET", Symposium on Nano Device Technology (SNDT), HsinChu, 2020/05/21
- "Large-Signal Characterization of Power FinFETs Based on X-Parameter Model", Asia-Pacific Microwave Conference (APMC), Marina Bay Sands, Singapore, 2019/12/10
- "Low-Frequency Noise in GaN HEMTs and MIS-HEMTs under UV Illumination", International Electron Devices & Materials (IEDMS), New Taipei City, 2019/10/24
- "Performance Improvement of RF FinTET with Field Plate", Symposium on Nano Device Technology (SNDT), HsinChu, 2019/04/26
- "Reliability study of hybrid wide drain poly-Si FinTFT", International Symposium on Next Generation Electronics (ISNE), Taipei, 2018/05/07
- "The impact of crystallization method on DC and RF characteristics of Poly-Si FinTFT", Symposium on Nano Device Technology (SNDT), HsinChu, 2018/04/20
- "Fabrication and characterization of FinTFT for RF and Power Applications", 2018 International Conference on Smart Science-ICSS2018, Miyazu, Kyoto, 2018/03/30
- "Simulation of the electrical characteristics of High-Voltage FinTFT with HKMG", 2018 International Conference on Smart Science-ICSS2018, Miyazu, Kyoto, 2018/03/30
- "Tri-Gate High-Voltage Thin-Film Transistor With Various Layout Design", International Electron Devices & Materials Symposium 2017, HsinChu, 2017/09/06
- "Tri-Gate High-Voltage Thin-Film Transistor for SoP Applications", International Electron Devices & Materials Symposium 2017, HsinChu, 2017/09/06
- "RF FinFET Transistor with Wider S/D Extensions", Symposium on Nano Device Technology (SNDT), HsinChu, 2017/04/27
- "Termination Design Issues on CMOS-compatible RF LDMOS", Symposium on Nano Device Technology (SNDT), HsinChu, 2016/05/12
- "RF Characteristics of Poly-Si TFTs with HfO2 Gate Dielectric Fabricated by Microwave Annealing", 2015 International Conference on Solid State Devices and Materials (SSDM), Sapporo, 2015/09/27
- "Trigate Field-Plated Poly-Si TFT with Extended Drift", Symposium on Nano Device Technology (SNDT), HsinChu, 2015/09/10
- "Novel Trigate Field-Plated Poly-Si TFT with Improved Leakage Current and High On/Off Current Ratio", 2015 Silicon Nanoelectronics Workshop (SNW), Kyoto, 2015/06/14
- "A Novel Hybrid Gate-All-Around High Voltage Thin Film Transistor with T-Shaped Metal Field Plate", 2014 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, 2014/06/08
- "RF Characteristics of Wide-Drain LDMOS Transistors with Various Drift Doping Concentrations", Symposium on Nano Device Technology (SNDT), 新竹, 2014/05/01
- "Effect of Drift Region Resistance on Temperature Characteristics of RF Power LDMOS Transistors", IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Seattle, 2013/06/02
- "Characterization of RF LDMOS Transistors with Various P-body and Drift Region Implant Doses", Symposium on Nano Device Technology (SNDT), 新竹, 2012/04/26
- "Low-Frequency Noise in Gate-All-Around Nanowire Poly-Si TFT Combined with nonvolatile SONOS memory", 2011 Silicon Nanoelectronics Workshop, 京都, 2011/06/12
回頁首